{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9768125","patent":{"patent_number":"US-9768125","title":"Method of manufacturing semiconductor device with a metal layer along a step portion","assignee":null,"inventors":[],"filing_date":"2015-05-14T00:00:00.000Z","publication_date":"2017-09-19T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":10,"abstract":"A method of manufacturing a semiconductor device includes preparing a semiconductor layer having an element region and an outer peripheral region, forming a step portion surrounding the outer periphery of the element region in the outer peripheral region, and forming a metal layer along the step portion. The metal layer extends to cover at least a portion of a sidewall of the step portion. The method of manufacturing the semiconductor device further includes dividing the semiconductor layer into element regions on an outside of the step portion when viewed from the element region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacturing semiconductor device with a metal layer along a step portion","description":"A method of manufacturing a semiconductor device includes preparing a semiconductor layer having an element region and an outer peripheral region, forming a step portion surrounding the outer peripher","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9768125","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9768125","citation_suggestion":"Patentable. \"Method of manufacturing semiconductor device with a metal layer along a step portion\" (US-9768125). https://patentable.app/patents/US-9768125","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9768125","json":"https://patentable.app/api/llm-context/US-9768125","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:04:46.402Z"}