{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9768135","patent":{"patent_number":"US-9768135","title":"Semiconductor device having conductive bump with improved reliability","assignee":null,"inventors":[],"filing_date":"2015-12-16T00:00:00.000Z","publication_date":"2017-09-19T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":11,"abstract":"The present disclosure discloses a semiconductor device having conductive bumps formed on a conductive redistribution layer and associated method for manufacturing. The semiconductor device may further include a first type shallow trench formed on a passivation layer overlying a semiconductor substrate. The conductive redistribution layer is formed in the first type shallow trench. A polyimide layer may be formed between neighboring conductive redistribution layers should a plurality of the conductive redistribution layers are formed with or without the first type shallow trench formed for each of the plurality of conductive redistribution layers."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device having conductive bump with improved reliability","description":"The present disclosure discloses a semiconductor device having conductive bumps formed on a conductive redistribution layer and associated method for manufacturing. The semiconductor device may furthe","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9768135","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9768135","citation_suggestion":"Patentable. \"Semiconductor device having conductive bump with improved reliability\" (US-9768135). https://patentable.app/patents/US-9768135","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9768135","json":"https://patentable.app/api/llm-context/US-9768135","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:11:04.661Z"}