{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9768173","patent":{"patent_number":"US-9768173","title":"Semiconductor structure containing low-resistance source and drain contacts","assignee":null,"inventors":[],"filing_date":"2016-07-26T00:00:00.000Z","publication_date":"2017-09-19T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":10,"abstract":"Semiconductor structures having a source contact and a drain contact that exhibit reduced contact resistance and methods of forming the same are disclosed. In one embodiment of the present application, the reduced contact resistance is provided by forming a layer of a dipole metal or metal-insulator-semiconductor (MIS) oxide between an epitaxial semiconductor material (providing the source region and the drain region of the device) and an overlying metal semiconductor alloy. In yet other embodiment, the reduced contact resistance is provided by increasing the area of the source region and drain region by patterning the epitaxial semiconductor material that constitutes at least an upper portion of the source region and drain region of the device."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor structure containing low-resistance source and drain contacts","description":"Semiconductor structures having a source contact and a drain contact that exhibit reduced contact resistance and methods of forming the same are disclosed. In one embodiment of the present application","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9768173","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9768173","citation_suggestion":"Patentable. \"Semiconductor structure containing low-resistance source and drain contacts\" (US-9768173). https://patentable.app/patents/US-9768173","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9768173","json":"https://patentable.app/api/llm-context/US-9768173","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:35:30.829Z"}