{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9768186","patent":{"patent_number":"US-9768186","title":"Three dimensional memory device having well contact pillar and method of making thereof","assignee":null,"inventors":[],"filing_date":"2016-07-22T00:00:00.000Z","publication_date":"2017-09-19T00:00:00.000Z","cpc_codes":["H01L","G11C","G11C","G11C","G11C"],"num_claims":17,"abstract":"A monolithic three dimensional memory device includes a semiconductor substrate having a major surface and a doped well region of a first conductivity type extending substantially parallel to the major surface of the semiconductor substrate, a plurality of NAND memory strings extending substantially perpendicular to the major surface of the semiconductor substrate, and a plurality of substantially pillar-shaped support members extending substantially perpendicular to the major surface of the semiconductor substrate, each support member including an electrically insulating outer material surrounding an electrically conductive core material that extends substantially perpendicular to the major surface of the semiconductor substrate and electrically contacting the doped well region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Three dimensional memory device having well contact pillar and method of making thereof","description":"A monolithic three dimensional memory device includes a semiconductor substrate having a major surface and a doped well region of a first conductivity type extending substantially parallel to the majo","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9768186","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9768186","citation_suggestion":"Patentable. \"Three dimensional memory device having well contact pillar and method of making thereof\" (US-9768186). https://patentable.app/patents/US-9768186","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9768186","json":"https://patentable.app/api/llm-context/US-9768186","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:18:01.225Z"}