{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9768187","patent":{"patent_number":"US-9768187","title":"Method of manufacturing split-gate non-volatile memory with hi-voltage and low-voltage peripheral circuitry","assignee":null,"inventors":[],"filing_date":"2016-09-15T00:00:00.000Z","publication_date":"2017-09-19T00:00:00.000Z","cpc_codes":["G11C","G11C"],"num_claims":10,"abstract":"To provide a semiconductor device having improved performance. A method of manufacturing the semiconductor device includes forming, after formation of a control gate electrode and a memory gate electrode, a conductive film on an insulating film made of a high-dielectric-constant film via a metal film; patterning the conductive film and thereby forming a gate electrode including the metal film and the conductive film in a high-voltage MISFET region, while forming a metal film portion and a conductive film portion in a low-voltage MISFET region; and then, removing the conductive film portion from the low-voltage MISFET region, forming another conductive film on the metal film portion, and forming a gate electrode including the metal film portion and the another conductive film."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacturing split-gate non-volatile memory with hi-voltage and low-voltage peripheral circuitry","description":"To provide a semiconductor device having improved performance. A method of manufacturing the semiconductor device includes forming, after formation of a control gate electrode and a memory gate electr","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9768187","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9768187","citation_suggestion":"Patentable. \"Method of manufacturing split-gate non-volatile memory with hi-voltage and low-voltage peripheral circuitry\" (US-9768187). https://patentable.app/patents/US-9768187","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9768187","json":"https://patentable.app/api/llm-context/US-9768187","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:21:26.248Z"}