{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9768220","patent":{"patent_number":"US-9768220","title":"Deep trench isolation structure for image sensors","assignee":null,"inventors":[],"filing_date":"2014-04-15T00:00:00.000Z","publication_date":"2017-09-19T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"Some embodiments of the present disclosure relate to a deep trench isolation structure. This deep trench isolation structure is formed on a semiconductor substrate having an upper semiconductor surface. A deep trench, which has a deep trench width as measured between opposing deep trench sidewalls, extends into the semiconductor substrate beneath the upper semiconductor surface. A fill material is formed in the deep trench, and a dielectric liner is disposed on a lower surface and sidewalls of the deep trench to separate the fill material from the semiconductor substrate. A shallow trench region has sidewalls that extend upwardly from the sidewalls of the deep trench to the upper semiconductor surface. The shallow trench region has a shallow trench width that is greater than the deep trench width. A dielectric material fills the shallow trench region and extends over top of the conductive material in the deep trench."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Deep trench isolation structure for image sensors","description":"Some embodiments of the present disclosure relate to a deep trench isolation structure. This deep trench isolation structure is formed on a semiconductor substrate having an upper semiconductor surfac","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9768220","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9768220","citation_suggestion":"Patentable. \"Deep trench isolation structure for image sensors\" (US-9768220). https://patentable.app/patents/US-9768220","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9768220","json":"https://patentable.app/api/llm-context/US-9768220","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:19:33.374Z"}