{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9768232","patent":{"patent_number":"US-9768232","title":"Variable resistance memory device and a method of manufacturing the same","assignee":null,"inventors":[],"filing_date":"2016-10-19T00:00:00.000Z","publication_date":"2017-09-19T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"A variable resistance memory device including a substrate, a first insulation layer disposed on the substrate, first and second conductive lines, and memory units. The first conductive lines are arranged in a first direction on the first insulation layer and extend in a second direction. The second conductive lines are disposed over the first conductive lines, are arranged in the second direction, and extend in the first direction. The memory units are disposed in each area between the first and second conductive lines in a third direction and include a first electrode, a variable resistance pattern, a selection pattern, and a second electrode. The first electrode and the variable resistance pattern include a cross-section having an “L” shape. The variable resistance pattern contacts an upper surface of the first electrode. The second electrode is disposed on the variable resistance pattern. The selection pattern is disposed on the second electrode."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Variable resistance memory device and a method of manufacturing the same","description":"A variable resistance memory device including a substrate, a first insulation layer disposed on the substrate, first and second conductive lines, and memory units. The first conductive lines are arran","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9768232","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9768232","citation_suggestion":"Patentable. \"Variable resistance memory device and a method of manufacturing the same\" (US-9768232). https://patentable.app/patents/US-9768232","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9768232","json":"https://patentable.app/api/llm-context/US-9768232","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:21:15.594Z"}