{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9768251","patent":{"patent_number":"US-9768251","title":"Method for manufacturing a semiconductor structure, semiconductor structure, and electronic device","assignee":null,"inventors":[],"filing_date":"2015-11-20T00:00:00.000Z","publication_date":"2017-09-19T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":12,"abstract":"A method for manufacturing a semiconductor structure comprises the steps of: providing a substrate including a first semiconductor material; forming a dielectric layer on a surface of the substrate; forming an opening in the dielectric layer having a bottom reaching the substrate; providing a second semiconductor material in the opening and on the substrate, the second semiconductor material being en-capsulated by a further dielectric material thereby forming a filled cavity; melting the second semiconductor material in the cavity; recrystallizing the second semi-conductor material in the cavity; laterally removing the second semiconductor material at least partially for forming a lateral surface at the second semiconductor material; and forming a third semiconductor material on the lateral surface of the second semiconductor material, wherein the third semiconductor material is different from the second semiconductor material."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for manufacturing a semiconductor structure, semiconductor structure, and electronic device","description":"A method for manufacturing a semiconductor structure comprises the steps of: providing a substrate including a first semiconductor material; forming a dielectric layer on a surface of the substrate; f","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9768251","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9768251","citation_suggestion":"Patentable. \"Method for manufacturing a semiconductor structure, semiconductor structure, and electronic device\" (US-9768251). https://patentable.app/patents/US-9768251","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9768251","json":"https://patentable.app/api/llm-context/US-9768251","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T12:46:39.727Z"}