{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9768260","patent":{"patent_number":"US-9768260","title":"Fabrication method of silicon carbide semiconductor apparatus and silicon carbide semiconductor apparatus fabricated thereby","assignee":null,"inventors":[],"filing_date":"2013-03-14T00:00:00.000Z","publication_date":"2017-09-19T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":19,"abstract":"Process (A) of preparing a silicon carbide substrate of a first conductivity type; process (B) of forming an epitaxial layer of the first conductivity type on one principal surface of the silicon carbide substrate; process (C) of forming on another principal surface of the silicon carbide substrate, a first metal layer; process (D) of heat treating the silicon carbide substrate after the process (C) to form an ohmic junction between the first metal layer and the other principal surface of the silicon carbide substrate, and a layer of a substance (10) highly cohesive with another metal on the first metal layer; and a process (E) of removing impurities and cleaning a surface of the first metal layer (8) on the other principal surface of the silicon carbide substrate (D), are performed. The heat treatment at process (D) is executed at a temperature of 1,100 degrees C. or more."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Fabrication method of silicon carbide semiconductor apparatus and silicon carbide semiconductor apparatus fabricated thereby","description":"Process (A) of preparing a silicon carbide substrate of a first conductivity type; process (B) of forming an epitaxial layer of the first conductivity type on one principal surface of the silicon carb","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9768260","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9768260","citation_suggestion":"Patentable. \"Fabrication method of silicon carbide semiconductor apparatus and silicon carbide semiconductor apparatus fabricated thereby\" (US-9768260). https://patentable.app/patents/US-9768260","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9768260","json":"https://patentable.app/api/llm-context/US-9768260","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T14:40:16.922Z"}