{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9768277","patent":{"patent_number":"US-9768277","title":"Method and apparatus of forming an integrated circuit with a strained channel region","assignee":null,"inventors":[],"filing_date":"2015-07-31T00:00:00.000Z","publication_date":"2017-09-19T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":20,"abstract":"Various methods include providing a substrate, forming a projection extending upwardly from the substrate, the projection having a channel region therein, and forming a gate structure engaging the projection adjacent to the channel region, the gate structure having spaced first and second conductive layers and a strain-inducing conductive layer disposed between the first and second conductive layers. The method also includes forming epitaxial growths on portions of the projection at each side of the gate structure, the epitaxial growths imparting a first strain to the channel region, and imparting a second strain to the channel region, including performing at least one stress memorization technique on the gate structure such that the strain-inducing conductive layer imparts the second strain to the channel region, and removing the capping layer, wherein the imparting the second strain is carried out in a manner that imparts tensile strain to the channel region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method and apparatus of forming an integrated circuit with a strained channel region","description":"Various methods include providing a substrate, forming a projection extending upwardly from the substrate, the projection having a channel region therein, and forming a gate structure engaging the pro","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9768277","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9768277","citation_suggestion":"Patentable. \"Method and apparatus of forming an integrated circuit with a strained channel region\" (US-9768277). https://patentable.app/patents/US-9768277","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9768277","json":"https://patentable.app/api/llm-context/US-9768277","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:29:59.424Z"}