{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9768283","patent":{"patent_number":"US-9768283","title":"High-voltage semiconductor structure","assignee":null,"inventors":[],"filing_date":"2016-03-21T00:00:00.000Z","publication_date":"2017-09-19T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":14,"abstract":"A high-voltage semiconductor structure including a substrate, a first doped region, a well, a second doped region, a third doped region, a fourth doped region, and a gate structure is provided. The substrate has a first conductive type. The first doped region has the first conductive type and is formed in the substrate. The well has a second conductive type and is formed in the substrate. The second doped region has the second conductive type and is formed in the first doped region. The third doped region has the first conductive type and is formed in the well. The fourth doped region has the second conductive type and is formed in the well. The gate structure is disposed over the substrate and partially covers the first doped region and the well."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"High-voltage semiconductor structure","description":"A high-voltage semiconductor structure including a substrate, a first doped region, a well, a second doped region, a third doped region, a fourth doped region, and a gate structure is provided. The su","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9768283","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9768283","citation_suggestion":"Patentable. \"High-voltage semiconductor structure\" (US-9768283). https://patentable.app/patents/US-9768283","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9768283","json":"https://patentable.app/api/llm-context/US-9768283","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T15:58:51.898Z"}