{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9768292","patent":{"patent_number":"US-9768292","title":"Laterally diffused metal oxide semiconductor device and manufacturing method therefor","assignee":null,"inventors":[],"filing_date":"2014-05-16T00:00:00.000Z","publication_date":"2017-09-19T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":10,"abstract":"Provided is a manufacturing method for a laterally diffused metal oxide semiconductor device, comprising the following steps: growing an oxide layer on a substrate of a wafer (S210); coating a photoresist on the surface of the wafer (S220); performing photoetching by using a first photoetching mask, and exposing a first implantation window after development (S230); performing ion implantation via the first implantation window to form a drift region in the substrate (S240); coating one layer of photoresist on the surface of the wafer again after removing the photoresist (S250); performing photoetching by using the photoetching mask of the oxide layer of the drift region (S260); and etching the oxide layer to form the oxide layer of the drift region (S270). Further provided is a laterally diffused metal oxide semiconductor device."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Laterally diffused metal oxide semiconductor device and manufacturing method therefor","description":"Provided is a manufacturing method for a laterally diffused metal oxide semiconductor device, comprising the following steps: growing an oxide layer on a substrate of a wafer (S210); coating a photore","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9768292","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9768292","citation_suggestion":"Patentable. \"Laterally diffused metal oxide semiconductor device and manufacturing method therefor\" (US-9768292). https://patentable.app/patents/US-9768292","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9768292","json":"https://patentable.app/api/llm-context/US-9768292","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:36:46.290Z"}