{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9768294","patent":{"patent_number":"US-9768294","title":"Method for producing semiconductor device and semiconductor device","assignee":null,"inventors":[],"filing_date":"2015-06-29T00:00:00.000Z","publication_date":"2017-09-19T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":5,"abstract":"A semiconductor device includes a fin-shaped semiconductor layer, a first insulating film formed around the fin-shaped semiconductor layer, a first metal film formed around the first insulating film, a pillar-shaped semiconductor layer formed on the fin-shaped semiconductor layer, a gate insulating film formed around the pillar-shaped semiconductor layer, a gate electrode formed around the gate insulating film and made of a third metal, a gate line connected to the gate electrode, a second insulating film formed around a sidewall of an upper portion of the pillar-shaped semiconductor layer, and a second metal film formed around the second insulating film. The upper portion of the pillar-shaped semiconductor layer and the second metal film are connected to each other, and an upper portion of the fin-shaped semiconductor layer and the first metal film are connected to each other."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for producing semiconductor device and semiconductor device","description":"A semiconductor device includes a fin-shaped semiconductor layer, a first insulating film formed around the fin-shaped semiconductor layer, a first metal film formed around the first insulating film, ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9768294","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9768294","citation_suggestion":"Patentable. \"Method for producing semiconductor device and semiconductor device\" (US-9768294). https://patentable.app/patents/US-9768294","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9768294","json":"https://patentable.app/api/llm-context/US-9768294","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:52:09.903Z"}