{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9768308","patent":{"patent_number":"US-9768308","title":"Low temperature poly-silicon thin film transistor and fabrication method thereof, array substrate and display device","assignee":null,"inventors":[],"filing_date":"2015-03-18T00:00:00.000Z","publication_date":"2017-09-19T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":14,"abstract":"A low temperature poly-silicon thin film transistor and a fabrication method thereof, an array substrate and a display device are provided. The method comprises: S1: sequentially forming an active layer (3), a gate insulation layer (4), a gate electrode (5) and an interlayer insulation layer (6) on a base substrate (1); S2: forming a first metal thin film layer (8); S3: performing a hydrogenation treatment on the active layer (3) and the gate insulation layer (6); S4: forming a second metal thin film layer (7), the second metal thin film layer (7) being used for forming a source electrode and a drain electrode."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Low temperature poly-silicon thin film transistor and fabrication method thereof, array substrate and display device","description":"A low temperature poly-silicon thin film transistor and a fabrication method thereof, an array substrate and a display device are provided. The method comprises: S1: sequentially forming an active lay","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9768308","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9768308","citation_suggestion":"Patentable. \"Low temperature poly-silicon thin film transistor and fabrication method thereof, array substrate and display device\" (US-9768308). https://patentable.app/patents/US-9768308","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9768308","json":"https://patentable.app/api/llm-context/US-9768308","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:59:23.819Z"}