{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9768316","patent":{"patent_number":"US-9768316","title":"Oxide semiconductor thin film and thin film transistor","assignee":null,"inventors":[],"filing_date":"2014-07-16T00:00:00.000Z","publication_date":"2017-09-19T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":7,"abstract":"Provided is a crystalline oxide semiconductor thin film comprising only bixbyite-structured In2O3 phase, suitable as a channel layer material for a thin film transistor, and having excellent etching properties in an amorphous state and a low carrier density and high carrier mobility in a crystalline state. An amorphous oxide thin film is formed using, as a target, an oxide sintered body which comprises indium, gallium, oxygen, and unavoidable impurities, the gallium content being in a range of 0.09 to 0.45 in terms of a Ga/(In+Ga) atomic ratio, has a In2O3 phase having a bixbyite structure as the main crystal phase, and has a GaInO3 phase having a β-Ga2O3-type structure, or a GaInO3 phase having a β-Ga2O3-type structure and a (Ga, In)2O3 phase finely dispersed therein. The amorphous oxide thin film is finely processed by performing etching using photolithography, and is annealed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Oxide semiconductor thin film and thin film transistor","description":"Provided is a crystalline oxide semiconductor thin film comprising only bixbyite-structured In2O3 phase, suitable as a channel layer material for a thin film transistor, and having excellent etching p","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9768316","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9768316","citation_suggestion":"Patentable. \"Oxide semiconductor thin film and thin film transistor\" (US-9768316). https://patentable.app/patents/US-9768316","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9768316","json":"https://patentable.app/api/llm-context/US-9768316","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:35:49.267Z"}