{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9768325","patent":{"patent_number":"US-9768325","title":"Diodes and fabrication methods thereof","assignee":null,"inventors":[],"filing_date":"2015-06-04T00:00:00.000Z","publication_date":"2017-09-19T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":16,"abstract":"Diodes and fabrication methods thereof are presented. The diodes include, for instance: a first semiconductor region disposed at least partially within a substrate, the first semiconductor region having a first conductivity type; and a second semiconductor region disposed at least partially within the first semiconductor region, the second semiconductor region having a second conductivity type, wherein the first semiconductor region separates the second semiconductor region from the substrate. In one embodiment, the substrate and the first semiconductor region have a sigma-shaped boundary. In another embodiment, the substrate and the first semiconductor region have U-shaped boundary. In a further embodiment, the first semiconductor region comprises an alloy of a first material and a second material, where the concentration of the second material varies from a maximum to a minimum, where the first semiconductor region adjacent to the second semiconductor region has the minimum of the concentration of the second material."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Diodes and fabrication methods thereof","description":"Diodes and fabrication methods thereof are presented. The diodes include, for instance: a first semiconductor region disposed at least partially within a substrate, the first semiconductor region havi","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9768325","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9768325","citation_suggestion":"Patentable. \"Diodes and fabrication methods thereof\" (US-9768325). https://patentable.app/patents/US-9768325","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9768325","json":"https://patentable.app/api/llm-context/US-9768325","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T12:26:19.659Z"}