{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9773567","patent":{"patent_number":"US-9773567","title":"Reduced silicon-oxide-nitride-oxide-silicon (SONOS) flash memory program disturb","assignee":null,"inventors":[],"filing_date":"2017-02-22T00:00:00.000Z","publication_date":"2017-09-26T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C"],"num_claims":20,"abstract":"A method and apparatus for balancing voltage stress at a silicon-oxide-nitride-oxide-silicon (SONOS) flash memory array is disclosed. A particular cell of the SONOS flash memory array is selected for programming. A first voltage stress associated with a first SONOS transistor is determined if the particular cell is programmed. The first SONOS transistor is included in a first unselected cell of the SONOS flash memory array. A second voltage stress associated with a second SONOS transistor is determined if the particular cell is programmed. The first voltage stress and the second voltage stress are balanced prior to programming the particular cell."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Reduced silicon-oxide-nitride-oxide-silicon (SONOS) flash memory program disturb","description":"A method and apparatus for balancing voltage stress at a silicon-oxide-nitride-oxide-silicon (SONOS) flash memory array is disclosed. A particular cell of the SONOS flash memory array is selected for ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9773567","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9773567","citation_suggestion":"Patentable. \"Reduced silicon-oxide-nitride-oxide-silicon (SONOS) flash memory program disturb\" (US-9773567). https://patentable.app/patents/US-9773567","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9773567","json":"https://patentable.app/api/llm-context/US-9773567","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:17:54.216Z"}