{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9773670","patent":{"patent_number":"US-9773670","title":"Method of preparation of III-V compound layer on large area Si insulating substrate","assignee":null,"inventors":[],"filing_date":"2016-03-11T00:00:00.000Z","publication_date":"2017-09-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":10,"abstract":"A method for making III-V-on-insulator on large-area Si Substrate wafer by confined epitaxial lateral overgrowth (CELO) has been disclosed. This method, based on selective epitaxy, starting from defining an epitaxy seed window to the Si substrate in a thermal oxide, from which the III-V material will grow."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of preparation of III-V compound layer on large area Si insulating substrate","description":"A method for making III-V-on-insulator on large-area Si Substrate wafer by confined epitaxial lateral overgrowth (CELO) has been disclosed. This method, based on selective epitaxy, starting from defin","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9773670","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9773670","citation_suggestion":"Patentable. \"Method of preparation of III-V compound layer on large area Si insulating substrate\" (US-9773670). https://patentable.app/patents/US-9773670","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9773670","json":"https://patentable.app/api/llm-context/US-9773670","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:27:58.813Z"}