{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9773681","patent":{"patent_number":"US-9773681","title":"Semiconductor device with a trench and method for manufacturing the same","assignee":null,"inventors":[],"filing_date":"2015-06-05T00:00:00.000Z","publication_date":"2017-09-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A semiconductor device is provided. The semiconductor device includes a substrate; an epitaxial layer disposed over the substrate; a gate electrode disposed over the epitaxial layer; a source region and a drain region disposed in the epitaxial layer at opposite sides of the gate electrode; a trench extending from a top surface of the epitaxial layer through the source region into the epitaxial layer, wherein the trench has a slanted side and a bottom surface; and a first conductive-type linking region having the first conductive type, wherein the first conductive-type linking region surrounds the slanted side of the trench and contacts the bottom surface of the trench, wherein the first conductive-type linking region electrically connects the source region and the substrate. The present disclosure also provides a method for manufacturing this semiconductor device."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device with a trench and method for manufacturing the same","description":"A semiconductor device is provided. The semiconductor device includes a substrate; an epitaxial layer disposed over the substrate; a gate electrode disposed over the epitaxial layer; a source region a","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9773681","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9773681","citation_suggestion":"Patentable. \"Semiconductor device with a trench and method for manufacturing the same\" (US-9773681). https://patentable.app/patents/US-9773681","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9773681","json":"https://patentable.app/api/llm-context/US-9773681","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T14:41:23.190Z"}