{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9773696","patent":{"patent_number":"US-9773696","title":"Semiconductor structure and manufacturing method thereof","assignee":null,"inventors":[],"filing_date":"2014-01-24T00:00:00.000Z","publication_date":"2017-09-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":5,"abstract":"The present disclosure provides a semiconductor structure having a semiconductor layer; a gate with a conductive portion and a sidewall spacer; an interlayer dielectric (ILD) surrounding the sidewall spacer; and a nitrogen-containing protection layer, positioning at least on the top surface of the conductive portion of the gate. A top surface of the conductive portion and a top surface of the sidewall spacer are substantially coplanar. The nitrogen-containing protection layer is not covering the sidewall surface of the sidewall spacer. The present disclosure provides a method for manufacturing a semiconductor structure. The method includes forming a metal gate structure having a conductive portion and a sidewall spacer surrounded by a first ILD; forming a protection layer over the metal gate structure, and the protection layer is formed to cover at least the conductive portion of the metal gate structure; and forming a second ILD over the metal gate structure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor structure and manufacturing method thereof","description":"The present disclosure provides a semiconductor structure having a semiconductor layer; a gate with a conductive portion and a sidewall spacer; an interlayer dielectric (ILD) surrounding the sidewall ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9773696","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9773696","citation_suggestion":"Patentable. \"Semiconductor structure and manufacturing method thereof\" (US-9773696). https://patentable.app/patents/US-9773696","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9773696","json":"https://patentable.app/api/llm-context/US-9773696","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T13:42:19.433Z"}