{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9773698","patent":{"patent_number":"US-9773698","title":"Method of manufacturing an ultra low dielectric layer","assignee":null,"inventors":[],"filing_date":"2015-09-30T00:00:00.000Z","publication_date":"2017-09-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":18,"abstract":"An article may include a structure including a patterned metal on a surface of a substrate, the patterned metal including metal features separated by gaps of an average dimension of less than about 1000 nm. A porous low dielectric constant material having a dielectric value of less than about 2.7 substantially occupies all gaps. An interface between the metal features and the porous low dielectric constant material may include less than about 0.1% by volume of voids. A method may include depositing a filling material including a silicon-based resin having a molecular weight of less than about 30,000 Da and a porogen having a molecular weight greater than about 400 Da onto a structure comprising a patterned metal. The deposited filling material may be subjected to a first thermal treatment to substantially fill all gaps, and subjected to a second thermal treatment and a UV radiation treatment."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacturing an ultra low dielectric layer","description":"An article may include a structure including a patterned metal on a surface of a substrate, the patterned metal including metal features separated by gaps of an average dimension of less than about 10","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9773698","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9773698","citation_suggestion":"Patentable. \"Method of manufacturing an ultra low dielectric layer\" (US-9773698). https://patentable.app/patents/US-9773698","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9773698","json":"https://patentable.app/api/llm-context/US-9773698","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T14:25:18.872Z"}