{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9773700","patent":{"patent_number":"US-9773700","title":"Aligning conductive vias with trenches","assignee":null,"inventors":[],"filing_date":"2016-06-08T00:00:00.000Z","publication_date":"2017-09-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":9,"abstract":"A method for forming conductive contacts on a wafer comprises forming a first hardmask, planarizing layer, second hardmask, and a layer of sacrificial mandrel material, and removing portions of the layer of sacrificial mandrel material to expose portions of the second hardmask and form a first and second sacrificial mandrel. Spacers are formed adjacent to the sacrificial mandrels. A filler material is deposited on the second hardmask, and a first mask is formed on the filler material. An exposed portion of the second sacrificial mandrel is removed to form a first cavity. The depth of the first cavity is increased. The first mask, portions of the first and second sacrificial mandrels, the filler material, portions of the second hardmask, the spacers, portions of the planarization layer and the first hardmask are removed. A second cavity is formed and the first and second cavities are filled with a conductive material."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Aligning conductive vias with trenches","description":"A method for forming conductive contacts on a wafer comprises forming a first hardmask, planarizing layer, second hardmask, and a layer of sacrificial mandrel material, and removing portions of the la","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9773700","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9773700","citation_suggestion":"Patentable. \"Aligning conductive vias with trenches\" (US-9773700). https://patentable.app/patents/US-9773700","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9773700","json":"https://patentable.app/api/llm-context/US-9773700","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:20:59.244Z"}