{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9773736","patent":{"patent_number":"US-9773736","title":"Intermediate layer for copper structuring and methods of formation thereof","assignee":null,"inventors":[],"filing_date":"2015-01-28T00:00:00.000Z","publication_date":"2017-09-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":21,"abstract":"A method of forming a metallization layer over a semiconductor substrate includes depositing a blanket layer of a diffusion barrier liner over an inter level dielectric layer, and depositing a blanket layer of an intermediate layer over the diffusion barrier liner. A blanket layer of a power metal layer including copper is deposited over the intermediate layer. The intermediate layer includes a solid solution of a majority element and copper. The intermediate layer has a different etch selectivity from the power metal layer. After depositing the power metal layer, structuring the power metal layer, the intermediate layer, and the diffusion barrier liner."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Intermediate layer for copper structuring and methods of formation thereof","description":"A method of forming a metallization layer over a semiconductor substrate includes depositing a blanket layer of a diffusion barrier liner over an inter level dielectric layer, and depositing a blanket","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9773736","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9773736","citation_suggestion":"Patentable. \"Intermediate layer for copper structuring and methods of formation thereof\" (US-9773736). https://patentable.app/patents/US-9773736","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9773736","json":"https://patentable.app/api/llm-context/US-9773736","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:28:02.164Z"}