{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9773780","patent":{"patent_number":"US-9773780","title":"Devices including gates with multiple lengths","assignee":null,"inventors":[],"filing_date":"2016-09-27T00:00:00.000Z","publication_date":"2017-09-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":18,"abstract":"A method for manufacturing a semiconductor device comprises forming a first dummy gate layer on a substrate, forming a second dummy gate layer on the substrate adjacent the first dummy gate layer, wherein the second dummy gate layer comprises a material which is capable of being selectively etched with respect a material of the first dummy gate layer, and patterning each of the first and second dummy gate layers into a plurality of first dummy gate stacks and a plurality of second dummy gate stacks, respectively, wherein the first dummy gate stacks are each wider along a gate length direction than each of the second dummy gate stacks, wherein the patterning is performed using a reactive ion etch (RIE) process that results in different lateral trimming between the first and second dummy gate layers."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Devices including gates with multiple lengths","description":"A method for manufacturing a semiconductor device comprises forming a first dummy gate layer on a substrate, forming a second dummy gate layer on the substrate adjacent the first dummy gate layer, whe","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9773780","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9773780","citation_suggestion":"Patentable. \"Devices including gates with multiple lengths\" (US-9773780). https://patentable.app/patents/US-9773780","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9773780","json":"https://patentable.app/api/llm-context/US-9773780","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T12:21:23.008Z"}