{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9773837","patent":{"patent_number":"US-9773837","title":"Scalable orthogonal spin transfer magnetic random access memory devices with reduced write error rates","assignee":null,"inventors":[],"filing_date":"2015-02-13T00:00:00.000Z","publication_date":"2017-09-26T00:00:00.000Z","cpc_codes":["G11C"],"num_claims":20,"abstract":"A magnetic device includes a pinned polarizing magnetic layer having a magnetic vector parallel to a plane of the pinned polarizing magnetic layer. The magnetic device also includes a free layer, separated from the polarizing magnetic layer by a first non-magnetic layer, having a magnetization vector with a changeable magnetization direction. The changeable magnetization vector is configured to change to a first state upon application of a first current of a first polarity and to change to a second state upon application of a second current of a second, opposite polarity. The magnetic device also has a reference layer having a magnetic vector perpendicular to the plane of the reference layer and separated from the free layer by a second non-magnetic layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Scalable orthogonal spin transfer magnetic random access memory devices with reduced write error rates","description":"A magnetic device includes a pinned polarizing magnetic layer having a magnetic vector parallel to a plane of the pinned polarizing magnetic layer. The magnetic device also includes a free layer, sepa","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9773837","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9773837","citation_suggestion":"Patentable. \"Scalable orthogonal spin transfer magnetic random access memory devices with reduced write error rates\" (US-9773837). https://patentable.app/patents/US-9773837","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9773837","json":"https://patentable.app/api/llm-context/US-9773837","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:22:59.669Z"}