{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9773863","patent":{"patent_number":"US-9773863","title":"VDMOS having a non-depletable extension zone formed between an active area and side surface of semiconductor body","assignee":null,"inventors":[],"filing_date":"2014-05-14T00:00:00.000Z","publication_date":"2017-09-26T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":18,"abstract":"A semiconductor device includes a semiconductor body with transistor cells arranged in an active area and absent in an edge area between the active area and a side surface. A field dielectric adjoins a first surface of the semiconductor body and separates, in the edge area, a conductive structure connected to gate electrodes of the transistor cells from the semiconductor body. The field dielectric includes a transition from a first vertical extension to a second, greater vertical extension. The transition is in the vertical projection of a non-depletable extension zone in the semiconductor body, wherein the non-depletable extension zone has a conductivity type of body/anode zones of the transistor cells and is electrically connected to at least one of the body/anode zones."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"VDMOS having a non-depletable extension zone formed between an active area and side surface of semiconductor body","description":"A semiconductor device includes a semiconductor body with transistor cells arranged in an active area and absent in an edge area between the active area and a side surface. A field dielectric adjoins ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9773863","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9773863","citation_suggestion":"Patentable. \"VDMOS having a non-depletable extension zone formed between an active area and side surface of semiconductor body\" (US-9773863). https://patentable.app/patents/US-9773863","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9773863","json":"https://patentable.app/api/llm-context/US-9773863","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T14:40:01.248Z"}