{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9773866","patent":{"patent_number":"US-9773866","title":"Semiconductor integrated circuits (ICs) employing localized low dielectric constant (low-K) material in inter-layer dielectric (ILD) material for improved speed performance","assignee":null,"inventors":[],"filing_date":"2015-06-18T00:00:00.000Z","publication_date":"2017-09-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":14,"abstract":"Semiconductor integrated circuits (ICs) employing localized low dielectric constant (low-K) material in inter-layer dielectric (ILD) material for improved speed performance are disclosed. To speed up performance of selected circuits in an IC that would otherwise lower overall speed performance of the IC, low-K dielectric material is employed during IC fabrication. The low-K dielectric material is provided in selected, localized areas of ILD material in which selected circuits are disposed. In this manner, the IC will experience an overall increased speed performance during operation, because circuit components and/or circuit element interconnects of selected circuit(s) that are disposed in the low-K ILD material will experience reduced signal delay. Also, by use of low-K dielectric material in only selected, localized areas of ILD material of selected circuits, mechanical and/or thermal stability concern issues that would arise from use of low-K dielectric material in all of the ILD material in the IC are avoided."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor integrated circuits (ICs) employing localized low dielectric constant (low-K) material in inter-layer dielectric (ILD) material for improved speed performance","description":"Semiconductor integrated circuits (ICs) employing localized low dielectric constant (low-K) material in inter-layer dielectric (ILD) material for improved speed performance are disclosed. To speed up ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9773866","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9773866","citation_suggestion":"Patentable. \"Semiconductor integrated circuits (ICs) employing localized low dielectric constant (low-K) material in inter-layer dielectric (ILD) material for improved speed performance\" (US-9773866). https://patentable.app/patents/US-9773866","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9773866","json":"https://patentable.app/api/llm-context/US-9773866","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:20:25.772Z"}