{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9773874","patent":{"patent_number":"US-9773874","title":"Silicon carbide semiconductor device and manufacturing method therefor","assignee":null,"inventors":[],"filing_date":"2013-07-25T00:00:00.000Z","publication_date":"2017-09-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":6,"abstract":"A silicon carbide semiconductor device includes trenches formed in a lattice shape on the surface of a silicon carbide substrate on which a semiconductor layer is formed, and gate electrodes formed inside of the trenches via a gate insulating film. The depth of the trenches is smaller in a portion where the trenches are crossingly formed than in a portion where the trenches are formed in parallel to each other. Consequently, the silicon carbide semiconductor device is obtained that increases a withstand voltage between the gate electrodes and corresponding drain electrodes on the semiconductor device rear surface to prevent dielectric breakdown and, at the same time, has a large area of the gate electrodes, high channel density per unit area, and low ON resistance."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Silicon carbide semiconductor device and manufacturing method therefor","description":"A silicon carbide semiconductor device includes trenches formed in a lattice shape on the surface of a silicon carbide substrate on which a semiconductor layer is formed, and gate electrodes formed in","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9773874","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9773874","citation_suggestion":"Patentable. \"Silicon carbide semiconductor device and manufacturing method therefor\" (US-9773874). https://patentable.app/patents/US-9773874","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9773874","json":"https://patentable.app/api/llm-context/US-9773874","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T13:42:38.639Z"}