{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9773891","patent":{"patent_number":"US-9773891","title":"FinFET and fabrication method thereof","assignee":null,"inventors":[],"filing_date":"2016-09-20T00:00:00.000Z","publication_date":"2017-09-26T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":18,"abstract":"Present embodiments provide for a FinFET and fabrication method thereof. The fabrication method includes two selective etching processes to form the channel. The FinFET includes a substrate, a shallow trench isolation (STI) layer, a buffer layer, a III-V group material, an oxide-isolation layer, a high-K dielectric layer and a conductor material. The STI is formed on the substrate with a trench. The buffer layer is formed on the substrate in the trench. The III-V group material is formed on the buffer layer in vertical stacked bowl shape. The oxide-isolation layer is formed between the substrate and the III-V group material. The high-K dielectric layer is formed on the STI layer and surrounding the III-V group material. The conductor material is formed surrounding the high-K dielectric layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"FinFET and fabrication method thereof","description":"Present embodiments provide for a FinFET and fabrication method thereof. The fabrication method includes two selective etching processes to form the channel. The FinFET includes a substrate, a shallow","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9773891","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9773891","citation_suggestion":"Patentable. \"FinFET and fabrication method thereof\" (US-9773891). https://patentable.app/patents/US-9773891","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9773891","json":"https://patentable.app/api/llm-context/US-9773891","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T16:23:59.963Z"}