{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9773902","patent":{"patent_number":"US-9773902","title":"Trench-gate semiconductor device and method for forming the same","assignee":null,"inventors":[],"filing_date":"2013-11-25T00:00:00.000Z","publication_date":"2017-09-26T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":25,"abstract":"A semiconductor device including a substrate having an active region and a field-plate region therein is disclosed. At least one trench-gate structure is in the substrate. The field-plate region is at a first side of the trench-gate structure. At least one source doped region is in the substrate at a second side opposite to the first side of the trench-gate structure. The source doped region adjoins the sidewall of the trench-gate structure. A drain doped region is in the substrate corresponding to the active region. The field-plate region is between the drain doped region and the trench-gate structure. An extending direction of length of the trench-gate structure is perpendicular to that of the drain doped region as viewed from a top-view perspective."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Trench-gate semiconductor device and method for forming the same","description":"A semiconductor device including a substrate having an active region and a field-plate region therein is disclosed. At least one trench-gate structure is in the substrate. The field-plate region is at","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9773902","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9773902","citation_suggestion":"Patentable. \"Trench-gate semiconductor device and method for forming the same\" (US-9773902). https://patentable.app/patents/US-9773902","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9773902","json":"https://patentable.app/api/llm-context/US-9773902","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:46:03.264Z"}