{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9773906","patent":{"patent_number":"US-9773906","title":"Relaxed semiconductor layers with reduced defects and methods of forming the same","assignee":null,"inventors":[],"filing_date":"2016-01-20T00:00:00.000Z","publication_date":"2017-09-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Methods of forming a layer of silicon germanium include forming an epitaxial layer of Si1-xGex on a silicon substrate, wherein the epitaxial layer of Si1-xGex has a thickness that is less than a critical thickness, hc, at which threading dislocations form in Si1-xGex on silicon; etching the epitaxial layer of Si1-xGex to form Si1-xGex pillars that define a trench in the epitaxial layer of Si1-xGex, wherein the trench has a height and a width, wherein the trench has an aspect ratio of height to width of at least 1.5; and epitaxially growing a suspended layer of Si1-xGex from upper portions of the Si1-xGex pillars, wherein the suspended layer defines an air gap in the trench beneath the suspended layer of Si1-xGex."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Relaxed semiconductor layers with reduced defects and methods of forming the same","description":"Methods of forming a layer of silicon germanium include forming an epitaxial layer of Si1-xGex on a silicon substrate, wherein the epitaxial layer of Si1-xGex has a thickness that is less than a criti","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9773906","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9773906","citation_suggestion":"Patentable. \"Relaxed semiconductor layers with reduced defects and methods of forming the same\" (US-9773906). https://patentable.app/patents/US-9773906","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9773906","json":"https://patentable.app/api/llm-context/US-9773906","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:02:34.001Z"}