{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9773911","patent":{"patent_number":"US-9773911","title":"Fin field effect transistor and fabricating method thereof","assignee":null,"inventors":[],"filing_date":"2016-02-05T00:00:00.000Z","publication_date":"2017-09-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":15,"abstract":"A FinFET including a substrate, a plurality of insulators and a gate stack is provided. The substrate includes a plurality of trenches and at least one semiconductor fin between the trenches. The insulators are disposed in the trenches. The semiconductor fin includes a first portion embedded between the insulators; a necking portion disposed on the first portion, the necking portion being uncovered by the insulators; and a second portion disposed on the necking portion, wherein a width of the necking portion is less than a width of the first portion. The gate stack partially covers the semiconductor fin, the at least one recess and the insulators."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Fin field effect transistor and fabricating method thereof","description":"A FinFET including a substrate, a plurality of insulators and a gate stack is provided. The substrate includes a plurality of trenches and at least one semiconductor fin between the trenches. The insu","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9773911","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9773911","citation_suggestion":"Patentable. \"Fin field effect transistor and fabricating method thereof\" (US-9773911). https://patentable.app/patents/US-9773911","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9773911","json":"https://patentable.app/api/llm-context/US-9773911","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T14:00:58.106Z"}