{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9773913","patent":{"patent_number":"US-9773913","title":"Vertical field effect transistor with wrap around metallic bottom contact to improve contact resistance","assignee":null,"inventors":[],"filing_date":"2016-05-06T00:00:00.000Z","publication_date":"2017-09-26T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"Semiconductor devices having vertical field effect transistor (FET) devices with reduced contact resistance are provided, as well as methods for fabricating vertical FET devices with reduced contact resistance. For example, a semiconductor device includes a vertical FET device formed on a substrate. The vertical FET comprises a lower source/drain region disposed on the substrate. The lower source/drain region comprises an upper surface, sidewall surfaces, and a bottom surface, wherein the bottom surface of the lower source/drain region contacts the substrate. A lower metallic contact is disposed adjacent to, and in contact with, at least one sidewall surface of the lower source/drain region, wherein the lower metallic contact comprises a laterally extended portion which laterally extends from the at least one sidewall surface of the lower source/drain region. A vertical source/drain contact is disposed adjacent to the vertical FET device and contacts the laterally extended portion of the lower metallic contact."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Vertical field effect transistor with wrap around metallic bottom contact to improve contact resistance","description":"Semiconductor devices having vertical field effect transistor (FET) devices with reduced contact resistance are provided, as well as methods for fabricating vertical FET devices with reduced contact r","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9773913","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9773913","citation_suggestion":"Patentable. \"Vertical field effect transistor with wrap around metallic bottom contact to improve contact resistance\" (US-9773913). https://patentable.app/patents/US-9773913","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9773913","json":"https://patentable.app/api/llm-context/US-9773913","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T12:26:32.960Z"}