{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9773919","patent":{"patent_number":"US-9773919","title":"Semiconductor device and manufacturing method thereof","assignee":null,"inventors":[],"filing_date":"2016-08-12T00:00:00.000Z","publication_date":"2017-09-26T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":4,"abstract":"A minute transistor is provided. A transistor with low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. A transistor having a high on-state current is provided. A semiconductor device including the transistor is provided. A semiconductor device having a high degree of integration is provided. A semiconductor device including an oxide semiconductor; a second insulator; a second conductor; a third conductor; a fourth conductor; a fifth conductor; a first conductor and a first insulator embedded in an opening portion formed in the second insulator, the second conductor, the third conductor, the fourth conductor, and the fifth conductor; a region where a side surface and a bottom surface of the second conductor are in contact with the fourth conductor; and a region where a side surface and a bottom surface of the third conductor are in contact with the fifth conductor."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and manufacturing method thereof","description":"A minute transistor is provided. A transistor with low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. A transistor having a high on-state current is","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9773919","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9773919","citation_suggestion":"Patentable. \"Semiconductor device and manufacturing method thereof\" (US-9773919). https://patentable.app/patents/US-9773919","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9773919","json":"https://patentable.app/api/llm-context/US-9773919","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T11:41:57.090Z"}