{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9777404","patent":{"patent_number":"US-9777404","title":"Method for manufacturing silicon carbide epitaxial substrate, and silicon carbide epitaxial substrate","assignee":null,"inventors":[],"filing_date":"2015-05-21T00:00:00.000Z","publication_date":"2017-10-03T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":4,"abstract":"A method for manufacturing a silicon carbide epitaxial substrate includes: a step of placing a silicon carbide single crystal substrate within a chamber and reducing a pressure within the chamber; a step of increasing a temperature within the chamber to a first temperature; a step of introducing hydrogen gas into the chamber and adjusting the pressure within the chamber; a step of introducing hydrocarbon gas into the chamber; a substrate reforming step of increasing the temperature within the chamber to a second temperature and holding the temperature at the second temperature for a predetermined time, with the adjusted pressure within the chamber and a flow rate of the hydrogen gas being maintained and the hydrocarbon gas being introduced; and a step of growing an epitaxial layer on the silicon carbide single crystal substrate by introducing silane gas into the chamber with the second temperature being maintained."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for manufacturing silicon carbide epitaxial substrate, and silicon carbide epitaxial substrate","description":"A method for manufacturing a silicon carbide epitaxial substrate includes: a step of placing a silicon carbide single crystal substrate within a chamber and reducing a pressure within the chamber; a s","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9777404","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9777404","citation_suggestion":"Patentable. \"Method for manufacturing silicon carbide epitaxial substrate, and silicon carbide epitaxial substrate\" (US-9777404). https://patentable.app/patents/US-9777404","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9777404","json":"https://patentable.app/api/llm-context/US-9777404","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:24:05.829Z"}