{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9779794","patent":{"patent_number":"US-9779794","title":"Techniques for forming spin-transfer torque memory (STTM) elements having annular contacts","assignee":null,"inventors":[],"filing_date":"2014-03-26T00:00:00.000Z","publication_date":"2017-10-03T00:00:00.000Z","cpc_codes":["G11C"],"num_claims":25,"abstract":"Techniques are disclosed for forming a spin-transfer torque memory (STTM) element having an annular contact to reduce critical current requirements. The techniques reduce critical current requirements for a given magnetic tunnel junction (MTJ), because the annular contact reduces contact size and increases local current density, thereby reducing the current needed to switch the direction of the free magnetic layer of the MTJ. In some cases, the annular contact surrounds at least a portion of an insulator layer that prevents the passage of current. In such cases, current flows through the annular contact and around the insulator layer to increase the local current density before flowing through the free magnetic layer. The insulator layer may comprise a dielectric material, and in some cases, is a tunnel material, such as magnesium oxide (MgO). In some cases, a critical current reduction of at least 10% is achieved for a given MTJ."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Techniques for forming spin-transfer torque memory (STTM) elements having annular contacts","description":"Techniques are disclosed for forming a spin-transfer torque memory (STTM) element having an annular contact to reduce critical current requirements. The techniques reduce critical current requirements","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9779794","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9779794","citation_suggestion":"Patentable. \"Techniques for forming spin-transfer torque memory (STTM) elements having annular contacts\" (US-9779794). https://patentable.app/patents/US-9779794","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9779794","json":"https://patentable.app/api/llm-context/US-9779794","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:48:12.824Z"}