{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9779797","patent":{"patent_number":"US-9779797","title":"Non-volatile memory device","assignee":null,"inventors":[],"filing_date":"2016-08-24T00:00:00.000Z","publication_date":"2017-10-03T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C"],"num_claims":10,"abstract":"A non-volatile memory device according to an embodiment includes a first conductive layer, a second conductive layer including metal nitride, the metal nitride absorbing oxygen, a paraelectric layer disposed between the first conductive layer and the second conductive layer, a ferroelectric layer disposed between the paraelectric layer and the second conductive layer, the ferroelectric layer including hafnium oxide, at least one third conductive layer disposed on opposite side of at least one of the first conductive layer and the second conductive layer to the ferroelectric layer, the at least one third conductive layer including metal oxide, the metal oxide having oxygen ratio larger than stoichiometric ratio, and a sense circuit configured to read data based on tunneling current flow between the first conductive layer and the second conductive layer through the paraelectric layer and the ferroelectric layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Non-volatile memory device","description":"A non-volatile memory device according to an embodiment includes a first conductive layer, a second conductive layer including metal nitride, the metal nitride absorbing oxygen, a paraelectric layer d","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9779797","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9779797","citation_suggestion":"Patentable. \"Non-volatile memory device\" (US-9779797). https://patentable.app/patents/US-9779797","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9779797","json":"https://patentable.app/api/llm-context/US-9779797","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:28:10.752Z"}