{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9779815","patent":{"patent_number":"US-9779815","title":"Method for writing in an EEPROM memory and corresponding device","assignee":null,"inventors":[],"filing_date":"2016-07-27T00:00:00.000Z","publication_date":"2017-10-03T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C"],"num_claims":24,"abstract":"A method can be used for writing in a memory location of the electrically-erasable and programmable memory type. The memory location includes a first memory cell with a first transistor having a first gate dielectric underlying a first floating gate and a second memory cell with a second transistor having a second gate dielectric underlying a second floating gate that is connected to the first floating gate. In a first writing phase, an identical tunnel effect is implemented through the first gate dielectric and the second gate dielectric. In a second writing phase, a voltage across the first gate dielectric but not the second gate dielectric is increased."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for writing in an EEPROM memory and corresponding device","description":"A method can be used for writing in a memory location of the electrically-erasable and programmable memory type. The memory location includes a first memory cell with a first transistor having a first","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9779815","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9779815","citation_suggestion":"Patentable. \"Method for writing in an EEPROM memory and corresponding device\" (US-9779815). https://patentable.app/patents/US-9779815","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9779815","json":"https://patentable.app/api/llm-context/US-9779815","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:21:42.968Z"}