{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9779827","patent":{"patent_number":"US-9779827","title":"Voltage control circuit for memory cell and the method thereof","assignee":null,"inventors":[],"filing_date":"2016-11-17T00:00:00.000Z","publication_date":"2017-10-03T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C"],"num_claims":13,"abstract":"A voltage control circuit for a memory cell having a floating gate transistor and a capacitive device, comprising a first input terminal, a second input terminal, a first output terminal and a second input terminal, wherein the first input terminal is configured to receive a power supply voltage, the second input terminal is configured to receive a ground reference, and wherein based on the power supply voltage and the ground reference, the first output terminal and the second output terminal respectively provides a first voltage signal and a second voltage signal, and wherein a voltage value of the first voltage signal is twice the power supply voltage, and a maximum of a voltage difference between the first voltage signal and the second voltage signal is three times the power supply voltage."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Voltage control circuit for memory cell and the method thereof","description":"A voltage control circuit for a memory cell having a floating gate transistor and a capacitive device, comprising a first input terminal, a second input terminal, a first output terminal and a second ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9779827","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9779827","citation_suggestion":"Patentable. \"Voltage control circuit for memory cell and the method thereof\" (US-9779827). https://patentable.app/patents/US-9779827","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9779827","json":"https://patentable.app/api/llm-context/US-9779827","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T14:00:54.445Z"}