{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9779935","patent":{"patent_number":"US-9779935","title":"Semiconductor substrate with stress relief regions","assignee":null,"inventors":[],"filing_date":"2016-04-05T00:00:00.000Z","publication_date":"2017-10-03T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":15,"abstract":"A crystalline base substrate including a first semiconductor material and having a main surface is provided. The base substrate is processed so as to damage a lattice structure of the base substrate in a first region that extends to the main surface without damaging a lattice structure of the base substrate in second regions that are adjacent to the first region. A first semiconductor layer of a second semiconductor material is formed on a portion of the main surface that includes the first and second regions. A third region of the first semiconductor layer covers the first region of the base substrate, and a fourth region of the first semiconductor layer covers the second region of the base substrate. The third region has a crystalline structure that is disorganized relative to a crystalline structure of the fourth region. The first and second semiconductor materials have different coefficients of thermal expansion."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor substrate with stress relief regions","description":"A crystalline base substrate including a first semiconductor material and having a main surface is provided. The base substrate is processed so as to damage a lattice structure of the base substrate i","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9779935","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9779935","citation_suggestion":"Patentable. \"Semiconductor substrate with stress relief regions\" (US-9779935). https://patentable.app/patents/US-9779935","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9779935","json":"https://patentable.app/api/llm-context/US-9779935","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T04:59:41.372Z"}