{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9779992","patent":{"patent_number":"US-9779992","title":"Semiconductor device and method of manufacturing the same","assignee":null,"inventors":[],"filing_date":"2016-02-02T00:00:00.000Z","publication_date":"2017-10-03T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method of manufacturing a semiconductor device includes forming a first via having a first diameter in a first main surface of a semiconductor substrate having a first thickness, after forming a first insulating film on a bottom surface and a side surface of the first via, forming a first through electrode inside the first via a first barrier metal film, after forming the first through electrode, processing the semiconductor substrate from a second main surface on an opposite side of the first main surface to reduce the first thickness of the semiconductor substrate to a second thickness thinner than the first thickness, after processing the semiconductor substrate, forming a third insulating film on the second main surface of the semiconductor substrate, and after forming the third insulating film, sequentially processing the third insulating film and the semiconductor substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and method of manufacturing the same","description":"A method of manufacturing a semiconductor device includes forming a first via having a first diameter in a first main surface of a semiconductor substrate having a first thickness, after forming a fir","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9779992","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9779992","citation_suggestion":"Patentable. \"Semiconductor device and method of manufacturing the same\" (US-9779992). https://patentable.app/patents/US-9779992","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9779992","json":"https://patentable.app/api/llm-context/US-9779992","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:09:25.054Z"}