{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9780012","patent":{"patent_number":"US-9780012","title":"Semiconductor device and method for manufacturing the same","assignee":null,"inventors":[],"filing_date":"2014-11-10T00:00:00.000Z","publication_date":"2017-10-03T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":6,"abstract":"A semiconductor device includes: an interlayer insulating film covering: a cathode region and an anode region to form a pn junction with each other; a cathode electrode provided on the interlayer insulating film and connected to the cathode region through a first contact hole; and an anode electrode provided on the interlayer insulating film and connected to the anode region through a second contact hole. Among current paths in the cathode and anode regions, the current path in one of the cathode and anode regions that has a larger sheet resistance is shorter than the other current path, the current path in the cathode region extending from an interface of the pn junction to an end of the first contact hole closest to the interface, the current path in the anode region extending from the interface to an end of the second contact hole closest to the interface."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and method for manufacturing the same","description":"A semiconductor device includes: an interlayer insulating film covering: a cathode region and an anode region to form a pn junction with each other; a cathode electrode provided on the interlayer insu","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9780012","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9780012","citation_suggestion":"Patentable. \"Semiconductor device and method for manufacturing the same\" (US-9780012). https://patentable.app/patents/US-9780012","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9780012","json":"https://patentable.app/api/llm-context/US-9780012","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:41:33.265Z"}