{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9780087","patent":{"patent_number":"US-9780087","title":"Semiconductor device and formation method thereof","assignee":null,"inventors":[],"filing_date":"2016-01-07T00:00:00.000Z","publication_date":"2017-10-03T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":18,"abstract":"The present disclosure provides a semiconductor device and formation method thereof. A shallow trench isolation structure is formed in a semiconductor substrate. A first dielectric layer is formed on the semiconductor substrate. First and second dummy gate structures are formed on the shallow trench isolation structure and through the first dielectric layer. A resistive material layer is formed on the first and second dummy gate structures and on the first dielectric layer between the first and second dummy gate structures. A second dielectric layer is formed on the first dielectric layer and the resistive material layer. A first plug is formed in the second dielectric layer and the resistive material layer and on the first dummy gate structure. A second plug is formed in the second dielectric layer and the resistive material layer and on the second dummy gate structure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and formation method thereof","description":"The present disclosure provides a semiconductor device and formation method thereof. A shallow trench isolation structure is formed in a semiconductor substrate. A first dielectric layer is formed on ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9780087","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9780087","citation_suggestion":"Patentable. \"Semiconductor device and formation method thereof\" (US-9780087). https://patentable.app/patents/US-9780087","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9780087","json":"https://patentable.app/api/llm-context/US-9780087","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:20:18.414Z"}