{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9780098","patent":{"patent_number":"US-9780098","title":"Integrated structure comprising neighboring transistors","assignee":null,"inventors":[],"filing_date":"2016-08-05T00:00:00.000Z","publication_date":"2017-10-03T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C"],"num_claims":24,"abstract":"An integrated structure includes a first MOS transistor with a first controllable gate region overlying a first gate dielectric and a second MOS transistor neighboring the first MOS transistor and having a second controllable gate region overlying the first gate dielectric. A common conductive region overlies the first and second gate regions and is separated therefrom by a second gate dielectric. The common conductive region includes a continuous element located over a portion of the first and second gate regions and a branch extending downward from the continuous element toward the substrate as far as the first gate dielectric. The branch located between the first and second gate regions."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Integrated structure comprising neighboring transistors","description":"An integrated structure includes a first MOS transistor with a first controllable gate region overlying a first gate dielectric and a second MOS transistor neighboring the first MOS transistor and hav","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9780098","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9780098","citation_suggestion":"Patentable. \"Integrated structure comprising neighboring transistors\" (US-9780098). https://patentable.app/patents/US-9780098","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9780098","json":"https://patentable.app/api/llm-context/US-9780098","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:16:18.723Z"}