{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9780100","patent":{"patent_number":"US-9780100","title":"Vertical floating gate memory with variable channel doping profile","assignee":null,"inventors":[],"filing_date":"2016-09-23T00:00:00.000Z","publication_date":"2017-10-03T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":6,"abstract":"A method of forming a memory device that includes forming a sacrificial gate on a surface of a first source/drain region, and forming a channel opening through the sacrificial gate. The method may further include forming an epitaxial channel region is formed in the channel opening that is in situ doped to have an opposite conductivity type as the first of the source/drain region. A second source/drain region is formed on a portion of the epitaxial channel region opposite the portion of the epitaxial channel region that the first source/drain region is present on, wherein the second source/drain region has a same conductivity type as the conductivity type of the first source/drain region. A memory gate structure including a floating gate and a control gate is substituted for the sacrificial gate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Vertical floating gate memory with variable channel doping profile","description":"A method of forming a memory device that includes forming a sacrificial gate on a surface of a first source/drain region, and forming a channel opening through the sacrificial gate. The method may fur","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9780100","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9780100","citation_suggestion":"Patentable. \"Vertical floating gate memory with variable channel doping profile\" (US-9780100). https://patentable.app/patents/US-9780100","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9780100","json":"https://patentable.app/api/llm-context/US-9780100","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:36:27.781Z"}