{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9780113","patent":{"patent_number":"US-9780113","title":"Method for fabricating semiconductor device including a first ILD with sloped surface on a stacked structure and a second ILD on the first ILD","assignee":null,"inventors":[],"filing_date":"2015-12-09T00:00:00.000Z","publication_date":"2017-10-03T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"A method for fabricating a semiconductor device includes forming a stacked structure on a substrate, forming a first interlayer dielectric covering the stacked structure, and forming a second interlayer dielectric covering the first interlayer dielectric. The stacked structure includes a stepwise shape. The first interlayer dielectric includes at least one step portion having a slope surface connecting a first top surface to a second top surface. The first top surface and the sloped surface define a first angle that is an obtuse angle. A level of the second top surface is higher than a level of the first top surface."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for fabricating semiconductor device including a first ILD with sloped surface on a stacked structure and a second ILD on the first ILD","description":"A method for fabricating a semiconductor device includes forming a stacked structure on a substrate, forming a first interlayer dielectric covering the stacked structure, and forming a second interlay","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9780113","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9780113","citation_suggestion":"Patentable. \"Method for fabricating semiconductor device including a first ILD with sloped surface on a stacked structure and a second ILD on the first ILD\" (US-9780113). https://patentable.app/patents/US-9780113","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9780113","json":"https://patentable.app/api/llm-context/US-9780113","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:18:05.717Z"}