{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9780164","patent":{"patent_number":"US-9780164","title":"Silicon-on-insulator radio frequency device and silicon-on-insulator substrate","assignee":null,"inventors":[],"filing_date":"2013-12-19T00:00:00.000Z","publication_date":"2017-10-03T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":15,"abstract":"A silicon-on-insulator radio frequency device and a silicon-on-insulator substrate are provided. In the silicon-on-insulator radio frequency device, a pit is formed on a surface of a high resistivity silicon plate which is close to a buried oxide layer. The pit may be filled with an insulating material, thereby increasing an equivalent surface resistance of the high resistivity silicon plate; or no insulating material is filled into the pit, that is, the pit remains a vacuum state or is only filled with air, which can increase the equivalent surface resistance of the high resistivity silicon plate as well. In such, an eddy current generated on a surface of the high resistivity silicon plate under the action of a radio frequency signal may be reduced. As a result, loss of the radio frequency signal is reduced and the linearity of the radio frequency signal is improved."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Silicon-on-insulator radio frequency device and silicon-on-insulator substrate","description":"A silicon-on-insulator radio frequency device and a silicon-on-insulator substrate are provided. In the silicon-on-insulator radio frequency device, a pit is formed on a surface of a high resistivity ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9780164","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9780164","citation_suggestion":"Patentable. \"Silicon-on-insulator radio frequency device and silicon-on-insulator substrate\" (US-9780164). https://patentable.app/patents/US-9780164","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9780164","json":"https://patentable.app/api/llm-context/US-9780164","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T04:57:08.609Z"}