{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9780168","patent":{"patent_number":"US-9780168","title":"IGBT with waved floating P-well electron injection","assignee":null,"inventors":[],"filing_date":"2015-08-31T00:00:00.000Z","publication_date":"2017-10-03T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":23,"abstract":"An IGBT includes a floating P well, and a floating N+ well that extends down into the floating P well. A bottom surface of the floating P well has a waved contour so that it has thinner portions and thicker portions. When the device is on, electrons flow laterally from an N+ emitter, and through a first channel region. Some electrons pass downward, but others pass laterally through the floating N+ well to a local bipolar transistor located at a thinner portion of the floating P type well. The transistor injects electrons down into the N− drift layer. Other electrons pass farther through the floating N+ well, through the second channel region, and to an electron injector portion of the N− drift layer. The extra electron injection afforded by the floating well structures reduces VCE(SAT). The waved contour is made without adding any masking step to the IGBT manufacturing process."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"IGBT with waved floating P-well electron injection","description":"An IGBT includes a floating P well, and a floating N+ well that extends down into the floating P well. A bottom surface of the floating P well has a waved contour so that it has thinner portions and t","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9780168","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9780168","citation_suggestion":"Patentable. \"IGBT with waved floating P-well electron injection\" (US-9780168). https://patentable.app/patents/US-9780168","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9780168","json":"https://patentable.app/api/llm-context/US-9780168","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T03:52:20.539Z"}