{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9780174","patent":{"patent_number":"US-9780174","title":"Methods for forming semiconductor regions in trenches","assignee":null,"inventors":[],"filing_date":"2015-07-15T00:00:00.000Z","publication_date":"2017-10-03T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":20,"abstract":"A structure includes a semiconductor substrate including a first semiconductor material. A portion of the semiconductor substrate extends between insulation regions in the semiconductor substrate. The portion of the semiconductor substrate has a (111) surface and a bottom surface. The (111) surface is slanted and has a top edge and a bottom edge. The bottom surface is parallel to a top surface of the insulation regions, and is connected to the bottom edge. A semiconductor region overlaps the portion of the semiconductor substrate, wherein the semiconductor region includes a second semiconductor material different from the first semiconductor material. The top edge and the bottom edge of the (111) surface are at a first depth and a second depth, respectively, relative to a top surface of the semiconductor region. A ratio of the first depth to the second depth is smaller than about 0.6."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Methods for forming semiconductor regions in trenches","description":"A structure includes a semiconductor substrate including a first semiconductor material. A portion of the semiconductor substrate extends between insulation regions in the semiconductor substrate. The","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9780174","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9780174","citation_suggestion":"Patentable. \"Methods for forming semiconductor regions in trenches\" (US-9780174). https://patentable.app/patents/US-9780174","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9780174","json":"https://patentable.app/api/llm-context/US-9780174","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:48:06.138Z"}