{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9780178","patent":{"patent_number":"US-9780178","title":"Methods of forming a gate contact above an active region of a semiconductor device","assignee":null,"inventors":[],"filing_date":"2015-06-05T00:00:00.000Z","publication_date":"2017-10-03T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":12,"abstract":"One method disclosed herein includes, among other things, forming a gate contact opening in a layer of insulating material, wherein the gate contact opening is positioned at least partially vertically above a active region, the gate contact opening exposing a portion of at least a gate cap layer of a gate structure, performing at least one etching process to remove the gate cap layer and recess a sidewall spacer so as to thereby define a spacer cavity and expose at least an upper surface of a gate electrode within the gate contact opening, filling the spacer cavity with an insulating material while leaving the upper surface of the gate electrode exposed, and forming a conductive gate contact in the gate contact opening."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Methods of forming a gate contact above an active region of a semiconductor device","description":"One method disclosed herein includes, among other things, forming a gate contact opening in a layer of insulating material, wherein the gate contact opening is positioned at least partially vertically","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9780178","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9780178","citation_suggestion":"Patentable. \"Methods of forming a gate contact above an active region of a semiconductor device\" (US-9780178). https://patentable.app/patents/US-9780178","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9780178","json":"https://patentable.app/api/llm-context/US-9780178","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T19:27:21.758Z"}